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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION MM4150 1N4150 mini-MELF SIGNAL DIODE Absolute Maximum Ratings (Ta=25C) Items Symbol Ratings Reverse Voltage VR 50 Reverse Recovery trr 4 Time Power Dissipation Ptot 500 Forward Current Junction Temp. Storage Temp. Mechanical Data Items Package Case Lead/Finish Chip Materials MELF Hermetically sealed glass Double stud/Solder Plating Glass Passivated Mini m i n i -MEL F Unit V ns mW mA C C 1.40 1.30 IF Tj Tstg 200 -65 to 200 -65 to 200 0.4 0.2 2 Places 3.40 3.20 Dimensions in millimeters Electrical Characteristics (Ta=25C) Ratings Minimum Breakdown Voltage @IR= 100uA Peak Forward Surge Current PW< 1sec. Maximum Forward Voltage IF= 200mA Maximum Reverse Current VR= 50V Maximum Junction Capacitance VR= 0, f= 1 MHz Maximum Reverse Recovery Time IF= 10mA, VR= 6V, IRR= 1mA, RL= 100 Maximum Thermal Resistance Symbol BV IFsurge VF IR Cj trr RJA Ratings 75 500 1.0 100 4 4 0.35 Unit V mA V nA pF ns C/mW RECTRON USA 1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com |
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